tsm 900 n 06 6 0 v n - channel power mosfet 1 / 8 version: b 14 to - 251s (ipak sl ) to - 252 (dpak) key parameter performance parameter value unit v ds 60 v r ds(on) (max) v gs = 10v 90 m v gs = 4 .5v 100 q g 9.3 nc sot - 223 ordering information part no. package packing tsm 900n06 c h x0 g to - 2 51s 75 pcs / tube tsm 900n06 c p rog to - 2 52 2.5kpcs / 13 reel tsm 900n06 c w rpg sot - 223 2.5kpcs / 13 reel note: g denotes for halogen - and antimony - free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimo ny compounds block diagram n - channel mosfet absolute maximum rating s ( t c = 25 c unless otherwise noted ) parameter symbol limit unit ipak dpak sot - 223 drain - source voltage v ds 60 v gate - source voltage v gs 20 v continuous drain current (note 1 ) t c = 2 5 c i d 11 a t c = 100 c 7 a pulsed drain current (note 1 ) i dm 44 a single pulse avalanche energy (note 3 ) e as 2 5 mj single pulse avalanche current (note 3 ) i a s 7 a total power dissipation @ t c =25 c p d 25 25 1.79 w derate above t c =25 c 0.2 0.2 0.014 w/ c operating junction temperature t j 150 c storage temperature range t stg - 55 to +150 c pin definition : 1. gate 2. drain 3. source
tsm 900 n 06 6 0 v n - channel power mosfet 2 / 8 version: b 14 thermal performance parameter symbol limit unit ipak dpak sot - 223 thermal resistance - junction to case r jc 5 5 30 c/w thermal resistance - junction to ambient r ja 62 62 70 c/w electrical specifications ( t c = 25 c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250 a bv dss 60 -- -- v drain - source on - state resistance v gs = 10v, i d = 6 a r ds(on) -- 76 90 m ? v gs = 4.5v, i d = 3 a -- 87 100 gate threshold voltage v ds = v gs , i d = 250 a v gs(th) 1.2 1. 8 2. 5 v zero gate voltage drain current v ds = 60v, v gs = 0v i dss -- -- 1 a v ds = 48v, t j = 125 c -- -- 10 gate body leakage v gs = 2 0v, v ds = 0v i gss -- -- 100 a forward transconductance v ds = 1 0v, i d = 3 a g fs -- 4 -- s dynamic total gate charge (note 4 , 5 ) v ds = 48 v, i d = 6 a, v gs = 10v q g -- 9.3 -- nc gate - source charge (note 4 , 5 ) q gs -- 2.1 -- gate - drain charge (note 4 , 5 ) q gd -- 1.8 -- input capacitance v ds = 15 v, v gs = 0v, f = 1mhz c iss -- 500 -- pf output capacitance c oss -- 45 -- reverse transfer capacitance c rss -- 16 -- gate resistance v gs =0v, v ds =0v, f =1mhz r g -- 2 -- ? switching turn - on delay time (note 4 , 5 ) v dd = 30v , v gs = 10v , r g = 3.3 w , i d = - 1a t d(on) -- 2.9 -- ns turn - on rise time (note 4 , 5 ) t r -- 9.5 -- turn - off delay time (note 4 , 5 ) t d(off) -- 18.4 -- turn - off fall time (note 4 , 5 ) t f -- 5.3 -- sou rce - drain diode ratings and characteristic continuous drain - source diode v g = v d = 0v , force current i s -- -- 11 a pulse drain - source diode i s m -- -- 44 a diode - source forward voltage v gs = 0v , i s = 1 a v sd -- -- 1 .2 v reverse recovery time (note 4 ) v gs = 3 0v , i s = 1 a di f /dt = 100a/s t rr -- 23.2 -- ns reverse recovery charge (note 4 ) q rr -- 1 4.3 -- n c note : 1. limited by maximum junction temperature . 2. repetitive rating : pulsed width limited by maximum junction temperature. 3. v dd =25v,v gs =10v,l= 1mh,i as = 7 a.,r g =25 w ,starting t j = 25 c 4. p ulse test: pulse width "d 300 s , duty cycle "d 2 % 5. essentially independent of operating temperature .
tsm 900 n 06 6 0 v n - channel power mosfet 3 / 8 version: b 14 electrical characteristics curve continuous drain current vs. tc normalized rdson vs. t j normalized v th vs . t j gate charge waveform normalized transient impedance (to - 25 1s ) maximum safe operation area (to - 251 s ) i d , continuous drain current (a) t c , case temperature ( c ) t j , junction temperature ( c ) normalized on resistance t j , junction temperature ( c ) normalized gate threshol d voltage q g , gate charge ( nc ) v gs , gate to source voltage (v) normalized thermal response square wave pulse duration (s) i d , continuous drain current (a) v ds , drain to source voltage (v)
tsm 900 n 06 6 0 v n - channel power mosfet 4 / 8 version: b 14 electrical characteristics curve ( t c = 25 o c , unless otherwise noted ) normalized transient impedance (to - 25 2 ) maximum safe opera tion area (to - 252) normalized transient impedance (sot - 223) maximum safe operation area (sot - 223) normalized therm al response (r ? jc ) square wave pulse duration (s) i d , continuous drain current (a) v ds , drain to source voltage (v) normalized thermal response (r ? jc ) square wave pulse duration (s) i d , continuous drain current (a) v ds , drain to source voltage (v)
tsm 900 n 06 6 0 v n - channel power mosfet 5 / 8 version: b 14 to - 251s mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free pr oduct ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 900 n 06 6 0 v n - channel power mosfet 6 / 8 version: b 14 to - 252 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 900 n 06 6 0 v n - channel power mosfet 7 / 8 version: b 14 sot - 223 mechanical drawing unit: millimeters marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code
tsm 900 n 06 6 0 v n - channel power mosfet 8 / 8 version: b 14 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products sh own herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from suc h improper use or sale.
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